to-220 plastic-encapsulate diodes features i o 20a vrrm high surge current capability applications rectifier marking mbr20300l(f)ct 1 h igh diode semiconductor to- 220 ab ito- 220 ab case pin 2 pin 1 pin 3 1 2 3 1 2 3 hd to 87 schottky rectifier 300v low vf mbr20300l(f)ct item symbol unit test conditions repetitive peak reverse voltage v rrm v average rectified output current i o a 60hz half-sine wave, resistance load, tc(fig.1) 20.0 surge(non-repetitive)forward current i fsm a 60hz half-sine wave ,1 cycle , ta =25 200 junction temperature t j -55~+150 storage temperature t stg -55 ~ +150 electrical characteristics (t a =25 unless otherwise specified ? item symbol unit test condition peak forward voltage v f v i f =10.0a peak reverse current i rrm1 ma v rm =v rrm t a =25 0.1 i rrm2 t a =125 thermal resistance(typical) r j-c /w between junction and case 3.0 1) notes: thermal resistance from junction to case per leg with heat-sink size of 2"3"0.25" al-plate 5 0.89 300 mbr20300l(f)ct mbr20300l(f)ct
typical characteristics 2 h igh diode semiconductor 50 fig.1: forward current derating curve io(a) tc( ) 0 70 90 110 130 150 20 16 12 8 4 1 ifsm(a) 2 5 10 20 50 100 fig2:surge forward current capadility number of c y cles at 60hz 100 150 8.3ms single half since-wave jedec method 200 50 0 fig.4 ? typical reverse characteristics voltage(%) ir(ma) tj=25 tj=75 0 20 40 60 80 100 0.001 0.01 0.1 1.0 10 tj=125 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.2 0.5 vf(v) if(a) fig3:instantaneous forward voltage 1.0 10 20 40 5.0 ta=25 0.8 0.9 1.0 0.1 0 60 1.1 1.2
3 h igh diode semiconductor to- 220 to- 220 ab ito- 220 ab
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